2N 4441 silicon thyristor 50V 8A 5W TO225AA
Description
2N 4444 Silizium Thyristor 600V 8A
- Maximum peak gate power (PGM): 5W
- Maximum repetitive peak and off-state voltage (VDRM): 50V
- Maximum average on-state current (IT(AVR)): 5.1A
- Maximum RMS on-state current (IT(RMS)): 8A
- Non repetitive surge peak on-state current (ITSM): 80A
- Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
- Maximum operating junction and storage temperature range (Tstg, Tj): -40..100 °C
- Junction to ambient thermal resistance (RTH(j-a)): 40 K/W
- Junction to case thermal resistance (RTH(j-c)): 2.5 K/W
- Triggering gate voltage (VGT): 1.5 V
- Peak on-state voltage drop (VTM): 1.5 V
- Triggering gate current (IGT): 30 mA
- Holding current (IH): 40 mA
