2SD669 NPN 180V 1,5A 1W TO 126
Beschreibung
2SD669A
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 1
Maximum collector-base voltage |Ucb|, V: 180
Maximum collector-emitter voltage |Uce|, V: 160
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 1.5
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 140
Collector capacitance (Cc), pF: 14
Forward current transfer ratio (hFE), min: 60
Noise Figure, dB: -
Package of 2SD669A transistor: TO126
