2SB 649A PNP 10V 1,5A TO 126
Beschreibung
2SB649A
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc) : 20 W
Maximum collector-base voltage |Ucb| : 180V
Maximum collector-emitter voltage |Uce| : 160V
Maximum emitter-base voltage |Ueb| : 0V
Maximum collector current |Ic max| : 1.5A
Maksimalna temperatura (Tj) : 150 °C
Transition frequency (ft) : 140MHz
Collector capacitance (Cc) : 27pF
Forward current transfer ratio (hFE) : 60 min
Noise Figure, dB: -
Package of 2SB649A transistor: TO126
