BSV16-16 NPN 60V 1A 800mW TO39
Beschreibung
BSV16-16
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.8
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 60
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1
Maksimalna temperatura (Tj), °C: 200
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 30
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: -
Package of BSV16-16 transistor: TO39