BFX60 NPN 40V 25mA 370mW TO72
Beschreibung
BFX60 NPN 40V 25mA 370mW TO72
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.37 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 25 V
- Maximum Emitter-Base Voltage |Veb|: 4 V
- Maximum Collector Current |Ic max|: 0.025 A
- Max. Operating Junction Temperature (Tj): 175 °C
- Transition Frequency (ft): 400 MHz
- Collector Capacitance (Cc): 0.3 pF
- Forward Current Transfer Ratio (hFE), MIN: 50
- Noise Figure, dB: -
- Package: TO72