2SB 56 25V 150mA TO 1
Beschreibung
2SB56
Material of transistor: Ge
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.15
Maximum collector-base voltage |Ucb|, V: 30
Maximum collector-emitter voltage |Uce|, V: 25
Maximum emitter-base voltage |Ueb|, V: 12
Maximum collector current |Ic max|, A: 0.15
Maksimalna temperatura (Tj), °C: 75
Transition frequency (ft), MHz: 0.5
Collector capacitance (Cc), pF: 70
Forward current transfer ratio (hFE), min: 80
Noise Figure, dB: -
Package of 2SB56 transistor: TO1