BSX69 NPN 30V 100mA 125mW SOT33
Beschreibung
BSX69 NPN 30V 100mA 125mW SOT33
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.125 W
- Maximum Collector-Base Voltage |Vcb|: 30 V
- Maximum Collector-Emitter Voltage |Vce|: 20 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.1 A
- Max. Operating Junction Temperature (Tj): 200 °C
- Transition Frequency (ft): 175 MHz
- Collector Capacitance (Cc): 8 pF
- Forward Current Transfer Ratio (hFE), MIN: 60
- Noise Figure, dB: -
- Package: SOT33