FDP18N50 N-Kanal 500V 18A 235W TO220
Description
FDP18N50 N-Kanal 500V 18A 235W TO220
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 235 W
- Maximum Drain-Source Voltage |Vds|: 500 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
- Maximum Drain Current |Id|: 18 A
- Maximum Junction Temperature (Tj): 150 °C
- Maximum Drain-Source On-State Resistance (Rds): 0.265 Ohm
- Package: TO220