6N60E Mosfet N Channel 60V 50A 120W TO220
Description
6N60E Mosfet N Channel 60V 50A 120W TO220
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 120 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Drain Current |Id|: 50 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 100 nS
- Drain-Source Capacitance (Cd): 430 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm
- Package: TO-220_TO-263_TO-251_TO-252_TO-220F