BSY51 NPN 60V 500 mA 800mW TO39
Description
BSY51 NPN 60V 500 mA 800mW TO39
- Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A Max.
Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO39