BD139-10 NPN 80V 1,5A 12W TO126
Description
BD139-10
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 12
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 80
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 1,5
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 63
Noise Figure, dB: -
Package of BD139-10 transistor: TO126
